vishay siliconix dg2735a document number: 67590 s11-0412-rev. a, 21-mar-11 www.vishay.com 1 this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 low voltage, 0.6 ? , dual spdt analog switch description the dg2735a is low voltage, low on-resistance, dual single- pole/double-throw (spdt) monolithic cmos analog switches designed for high performance switching of analog signals. combining low-power, high speed, low on-resistance, and small package size, the dg2735a is ideal for portable and battery power applications. the dg2735a have an operation range from 1.65 v to 4.3 v single supply. the dg2735a has two separate control pins with for the separated two spdt switched. the dg2735a is guaranteed 1.65 v logic compatible, allowing the easy interface with low voltage dsp or mcu control logic and ideal for one cell li-ion battery direct power. the switch conducts signals within power rails equally well in both directions when on, and blocks up to the power supply level when off. break-before-make is guaranteed. the dg2735a is built on vis hay siliconix's sub micron cmos low voltage process technology and provides greater than 300 ma latch-up protection, as tested per jesd78. as a committed partner to the community and the environment, vishay siliconix manufactures this product with lead (pb)-free device terminations. dg2735a is offered in a miniqfn package. the miniqfn package has a nickel- palladium-gold device terminatio n and is represented by the lead (pb)-free ?-e4? suffix. the nickel-palladium-gold device terminations meet all jedec standards for reflow and msl ratings. features ? low voltage operation (1.65 v to 4.3 v) ? low on-resistance - r on : 0.6 ? at 2.7 v ? fast switching: t on = 64 ns at 2.7 v t off = 42 ns at 2.7 v ? latch-up current > 300 ma (jesd78) ? halogen-free according to iec 61249-2-21 definition ? compliant to rohs directive 2002/95/ec benefits ? reduced power consumption ? high accuracy ? reduce board space ? ttl/1.65 v logic compatible applications ? cellular phones ? speaker headset switching ? audio and video signal routing ? pcmcia cards ? battery operated systems ? portable media player handheld test instruments functional block diagram and pin configuration g n d n c2 dg2735a miniqfn-10l 6 7 2 1 v + n o1 com1 n c1 i n 1 3 4 5 i n 2 com2 n o2 8 9 10 pin 1: long lead device markin g : hx for dg2735a x = date/lot traceability code (top v ie w ) pin 1 n ote: pin 1 has long lead hx
www.vishay.com 2 document number: 67590 s11-0412-rev. a, 21-mar-11 vishay siliconix dg2735a this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by inte rnal diodes. limit forward diode current to maximum curr ent ratings. b. all leads welded or soldered to pc board. c. derate 4.0 mw/c above 70 c. truth table logic nc no 0on off 1off on ordering information temp. range package part number - 40 c to 85c miniqfn10 DG2735ADN-T1-GE4 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit reference to gnd v+ - 0.3 to 5.0 v in, com, nc, no a - 0.3 to (v+ + 0.3) current (any terminal except no, nc or com) 30 ma continuous current (no, nc, or com) 250 peak current (pulsed at 1 ms, 10 % duty cycle) 500 storage temperature (d suffix) - 65 to 150 c power dissipation (packages) b miniqfn10 c 208 mw specifications (v+ = 3 v) parameter symbol test conditions unless otherwise specified v+ = 3 v, 10 %,v in = 0.4 v or 1.65 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v analog r ds(on) full 0 v+ v on-resistance r ds(on) v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v room 0.5 0.6 ? v+ = 2.7 v, i no/nc = 100 ma, v com = 1.5 v v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v full 0.6 v+ = 2.7 v, i no/nc = 100 ma, v com = 1.5 v v+ = 4.3 v, i no/nc = 100 ma, v com = 0.9 v room 0.4 0.5 v+ = 4.3 v, i no/nc = 100 ma, v com = 2.5 v v+ = 4.3 v, i no/nc = 100 ma, v com = 0.9 v full 0.4 v+ = 4.3 v, i no/nc = 100 ma, v com = 2.5 v r on match d ? r on v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v, 1.5 v room 0.06 0.08 v+ = 4.3 v, i no/nc = 100 ma, v com = 0.9 v, 2.5 v r on resistance flatness d r on flatness v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v, 1.5 v room 0.15 switch off leakage current i no/nc(off) v+ = 4.3 v, v no/nc = 0.3 v/4.0 v, v com = 4.0 v/0.3 v room - 10 10 na full - 50 50 i com(off) room - 10 10 full - 50 50 channel-on leakage current i com(on) v+ = 4.3 v, v no/nc = v com = 4.0 v/0.3 v room full - 20 20 - 100 100 digital control input high voltage v inh full 1.65 v input low voltage v inl full 0.4 input capacitance c in full 6 pf input current i inl or i inh v in = 0 or v+ full - 1 1 a
document number: 67590 s11-0412-rev. a, 21-mar-11 www.vishay.com 3 vishay siliconix dg2735a this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. room = 25 c, full = as determined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, not subjected to production test. e. v in = input voltage to perform proper function. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. typical characteristics (t a = 25 c, unless otherwise noted) dynamic characteristics break-before-make time e t bbm v+ = 3.6 v, v no , v nc = 1.5 v, r l = 50 ? , c l = 35 pf room 1 11 ns tu r n - o n t i m e e t on room 44 75 full 80 turn-off time e t off room 26 55 full 60 off-isolation d o irr r l = 50 ? , c l = 5 pf, f = 100 khz room - 70 db crosstalk d x ta l k - 70 3db bandwith d r l = 50 ? , c l = 5 pf room 30 mhz no, nc off capacitance d c no(off) v in = 0 v, or v+, f = 1 mhz room 52 pf c nc(off) 52 channel on capacitance d c no(on) 168 c nc(on) 168 power supply power supply range v+ 1.65 4.3 v power supply current i+ v in = 0 or v+ full 1.0 a specifications (v+ = 3 v) parameter symbol test conditions unless otherwise specified v+ = 3 v, 10 %,v in = 0.4 v or 1.65 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b r on vs. v com and single supply voltage v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 2.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i n o/ n c = 100 ma t a = 25 c v + = 1.65 v v + = 1. 8 v v + = 3.6 v v + = 3.0 v v + = 2.0 v v + = 2.7 v v + = 3.3 v v + = 4.3 v r on vs. v com and single supply voltage 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o 0 0.5 1 1.5 2 2.5 3 + 25 c i n c = 100 ma v + = 2.7 v ( n c) - 40 c + 8 5 c
www.vishay.com 4 document number: 67590 s11-0412-rev. a, 21-mar-11 vishay siliconix dg2735a this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) r on vs. v com and single supply voltage r on vs. v com and single supply voltage supply current vs. v in 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o 0 0.5 1 1.5 2 2.5 3 + 25 c i n o = 100 ma v + = 2.7 v ( n o) - 40 c + 8 5 c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o + 25 c - 40 c i n o = 100 ma v + = 4.3 v ( n o) + 8 5 c v i n - ( v ) i+ - s u pply c u rrent ( a) 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 c r on vs. v com and single supply voltage i+ supply current vs. temperature supply current vs. switching frequency 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o + 25 c - 40 c i n c = 100 ma v + = 4.3 v ( n c) + 8 5 c temperat u re (c) ) a n ( t n e r r u c y l p p u s - + i - 60 - 40 - 20 0 20 40 60 8 0100 v + = 4.3 v 0.01 0.1 1 10 v i n = 0 v s w itching fre qu ency (khz) ) a ( t n e r r u c y l p p u s - + i 0.1 1 10 100 1000 10 000 0.01 0.1 1 10 100 1000 10 000 25 c v + = 3.0 v v + = 4.3 v
document number: 67590 s11-0412-rev. a, 21-mar-11 www.vishay.com 5 vishay siliconix dg2735a this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) leakage vs. analog voltage switching time vs. temperature - 2000 - 1500 - 1000 - 500 0 500 1000 1500 2000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v com , v n o , v n c - analog v oltage ( v ) ) a p ( t n e r r u c e g a k a e l i com(off) i com(on) i n o/ n c(off) temperat u re (c) t o n , t off - s w itching time (ns) 0 - 60 - 40 - 20 0 20 40 60 8 0 100 t o n v + = 2.7 v 10 20 30 40 50 60 70 8 0 t o n v + = 3.6 v t off v + = 2.7 v t off v + = 4.3 v t off v + = 3.6 v t o n v + = 4.3 v leakage current vs. temperature insertion loss, off-isolation crosstalk vs. frequency 0.1 1 10 100 1000 10 000 100 000 temperat u re (c) ) a p ( t n e r r u c e g a k a e l - 60 - 40 - 20 0 20 40 60 8 0 100 i v + = 4.3 v i com(on) i com(off) n o/ n c(off) 100k 1m 10m 100m 1g fre qu ency (hz) loss, oirr, x talk (db) - 8 0 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 oirr loss x talk v + = 3.0 v r = 50 l switching threshold vs. supply voltage v + - s u pply v oltage ( v ) h t g n i h c t i w s - ) v ( d l o h s e r v t 0.00 0.20 0.40 0.60 0. 8 0 1.00 1.20 1.40 1.5 2.0 2.5 3.0 3.5 4.0 4.5 typical from - 40 c to 8 5 c
www.vishay.com 6 document number: 67590 s11-0412-rev. a, 21-mar-11 vishay siliconix dg2735a this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 50 v out gnd v+ 50 % 0 v logic input switch output t on t off logic ?1? = switch on logic input waveforms inverted for switches that have the opposite logic sense. 0 v switch output v out v com r l r l r on 0.9 x v out t r 5 ns t f 5 ns v inh v inl ? ? ? ? ? ( ) figure 2. break-before-make interval c l (includes fixture and stray capacitance) nc v no no v nc 0 v logic input switch output v o v nc = v no t r < 5 ns t f < 5 ns 90 % t d t d in com v+ gnd v+ c l 35 pf v o r l 50 ? v inl v inh
document number: 67590 s11-0412-rev. a, 21-mar-11 www.vishay.com 7 vishay siliconix dg2735a this datasheet is subject to change without notice. the product described herein and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67590 . figure 3. charge injection off on on in v out v out q = ? v out x c l c l = 1 nf r gen v out com v in = 0 - v+ in gnd v+ v+ in depends on switch configuration: input polarity determined b y sense of switch. + nc or no v gen ? figure 4. off-isolation in gnd nc or no 0 v, 2.4 v 10 nf com off isolation 20 log v com v no / nc r l analyzer v+ v+ com = figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+
vishay siliconix package information document number: 74496 12-feb-07 www.vishay.com 1 mini qfn-10l case outline dim millimeters inches min. nam. max. min. nam. max. a 0.50 0.55 0.60 0.0197 0.0217 0.0236 a1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.15 ref 0.006 ref d 1.75 1.80 1.85 0.069 0.071 0.073 e 1.35 1.40 1.45 0.053 0.055 0.057 e 0.40 bsc 0.016 bsc l 0.35 0.40 0.45 0.014 0.016 0.018 l1 0.45 0.50 0.55 0.0177 0.0197 0.0217 ecn t-07039-rev. a, 12-feb-07 dwg: 5957
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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